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TK099V65Z,LQ

TK099V65Z,LQ Toshiba Semiconductor and Storage

TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+4.18 EUR
Mindestbestellmenge: 2500
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Technische Details TK099V65Z,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 30A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.27mA, Supplier Device Package: 5-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V.

Weitere Produktangebote TK099V65Z,LQ nach Preis ab 4.44 EUR bis 12.79 EUR

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TK099V65Z,LQ TK099V65Z,LQ Hersteller : Toshiba Semiconductor and Storage TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 14954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.59 EUR
10+ 7.21 EUR
100+ 5.83 EUR
500+ 5.19 EUR
1000+ 4.44 EUR
Mindestbestellmenge: 3
TK099V65Z,LQ TK099V65Z,LQ Hersteller : Toshiba TK099V65Z_datasheet_en_20190927-2509646.pdf MOSFET 230W 1MHz 8x8DFN
auf Bestellung 9982 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+12.79 EUR
10+ 10.74 EUR
25+ 10.14 EUR
100+ 8.68 EUR
250+ 8.19 EUR
500+ 7.72 EUR
1000+ 6.6 EUR
Mindestbestellmenge: 5
TK099V65Z,LQ TK099V65Z,LQ Hersteller : Toshiba tk099v65z_datasheet_en_20190927.pdf Trans MOSFET N-CH Si 650V 30A 5-Pin DFN EP
Produkt ist nicht verfügbar
TK099V65Z,LQ TK099V65Z,LQ Hersteller : Toshiba tk099v65z_datasheet_en_20190927.pdf Trans MOSFET N-CH Si 650V 30A 5-Pin DFN EP
Produkt ist nicht verfügbar