auf Bestellung 200 Stücke:
Lieferzeit 86-90 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.12 EUR |
| 10+ | 3.57 EUR |
| 25+ | 3.50 EUR |
| 50+ | 3.40 EUR |
| 100+ | 2.50 EUR |
| 250+ | 2.48 EUR |
| 500+ | 2.02 EUR |
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Technische Details TK100E06N1,S1X Toshiba
Description: MOSFET N CH 60V 100A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V.
Weitere Produktangebote TK100E06N1,S1X nach Preis ab 3.48 EUR bis 5.33 EUR
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TK100E06N1,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N CH 60V 100A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TK100E06N1,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220 Magazine |
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