Weitere Produktangebote TK100E08N1,S1X nach Preis ab 4.58 EUR bis 11.13 EUR
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TK100E08N1,S1X | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 80V 100A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V |
auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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TK100E08N1,S1X | Toshiba |
MOSFETs 80V N-Ch PWR FET 9000pF 130nC 214A |
auf Bestellung 161 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK100E08N1,S1X |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11 EUR |
| 50+ | 5.8 EUR |
| TK100E08N1,S1X |
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Hersteller: Toshiba
MOSFETs 80V N-Ch PWR FET 9000pF 130nC 214A
MOSFETs 80V N-Ch PWR FET 9000pF 130nC 214A
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.13 EUR |
| 10+ | 5.87 EUR |
| 100+ | 5.82 EUR |
| 500+ | 4.58 EUR |