Weitere Produktangebote TK100E10N1,S1X nach Preis ab 3.96 EUR bis 11.13 EUR
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TK100E10N1,S1X | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 100V 100A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
auf Bestellung 2012 Stücke: Lieferzeit 10-14 Tag (e) |
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TK100E10N1,S1X | Toshiba |
MOSFETs 100V N-Ch PWR FET 8800pF 140nC 207A |
auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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TK100E10N1,S1X | Toshiba |
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220 Magazine |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TK100E10N1,S1X | Toshiba |
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220 Magazine |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK100E10N1,S1X |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Description: MOSFET N-CH 100V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
auf Bestellung 2012 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11 EUR |
| 50+ | 5.8 EUR |
| 100+ | 5.3 EUR |
| 500+ | 4.41 EUR |
| 1000+ | 4.13 EUR |
| 2000+ | 3.96 EUR |
| TK100E10N1,S1X |
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Hersteller: Toshiba
MOSFETs 100V N-Ch PWR FET 8800pF 140nC 207A
MOSFETs 100V N-Ch PWR FET 8800pF 140nC 207A
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.13 EUR |
| 10+ | 5.87 EUR |
| 100+ | 5.34 EUR |
| 500+ | 4.58 EUR |
| TK100E10N1,S1X |
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Hersteller: Toshiba
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220 Magazine
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220 Magazine
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| TK100E10N1,S1X |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220 Magazine
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220 Magazine
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)