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| Anzahl | Preis |
|---|---|
| 1+ | 39.41 EUR |
| 10+ | 33.77 EUR |
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Technische Details TK100L60W,VQ Toshiba
Description: MOSFET N-CH 600V 100A TO3P, Packaging: Tube, Package / Case: TO-3PL, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V, Power Dissipation (Max): 797W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 5mA, Supplier Device Package: TO-3P(L), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V.
Weitere Produktangebote TK100L60W,VQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK100L60W,VQ | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 600V 100A 3-Pin(3+Tab) TO-3PL Tray |
Produkt ist nicht verfügbar |
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TK100L60W,VQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 100A TO3P Packaging: Tube Package / Case: TO-3PL Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Power Dissipation (Max): 797W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 5mA Supplier Device Package: TO-3P(L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V |
Produkt ist nicht verfügbar |