TK100L60W,VQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 100A TO3P, Packaging: Tube, Package / Case: TO-3PL, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V, Power Dissipation (Max): 797W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 5mA, Supplier Device Package: TO-3P(L), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V.