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TK100S04N1L,LQ

TK100S04N1L,LQ Toshiba Semiconductor and Storage

TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 3155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.31 EUR
10+ 3.59 EUR
100+ 2.85 EUR
500+ 2.41 EUR
1000+ 2.05 EUR
Mindestbestellmenge: 5
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Technische Details TK100S04N1L,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 100A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V.

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TK100S04N1L,LQ TK100S04N1L,LQ Hersteller : Toshiba TK100S04N1L_datasheet_en_20200624-1840137.pdf MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK
auf Bestellung 2536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.42 EUR
10+ 3.68 EUR
100+ 2.92 EUR
250+ 2.8 EUR
500+ 2.46 EUR
1000+ 2.11 EUR
2000+ 1.95 EUR
TK100S04N1L,LQ TK100S04N1L,LQ Hersteller : Toshiba tk100s04n1l_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 40V 100A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
TK100S04N1L,LQ TK100S04N1L,LQ Hersteller : Toshiba Semiconductor and Storage TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Produkt ist nicht verfügbar