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TK100S04N1L,LXHQ

TK100S04N1L,LXHQ Toshiba Semiconductor and Storage

TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.62 EUR
Mindestbestellmenge: 2000
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Technische Details TK100S04N1L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 100A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V.

Weitere Produktangebote TK100S04N1L,LXHQ nach Preis ab 1.57 EUR bis 3.98 EUR

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TK100S04N1L,LXHQ TK100S04N1L,LXHQ Hersteller : Toshiba Semiconductor and Storage TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2703 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.21 EUR
100+ 2.49 EUR
500+ 2.11 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 7
TK100S04N1L,LXHQ TK100S04N1L,LXHQ Hersteller : Toshiba TK100S04N1L_datasheet_en_20200624-1840137.pdf MOSFET 180W 1MHz Automotive; AEC-Q101
auf Bestellung 17681 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.98 EUR
16+ 3.25 EUR
100+ 2.51 EUR
500+ 2.15 EUR
1000+ 1.75 EUR
2000+ 1.65 EUR
4000+ 1.57 EUR
Mindestbestellmenge: 14