auf Bestellung 100 Stücke:
Lieferzeit 55-59 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.55 EUR |
| 10+ | 5.32 EUR |
| 50+ | 3.33 EUR |
| 100+ | 3.03 EUR |
| 500+ | 2.97 EUR |
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Technische Details TK10E60W,S1VX Toshiba
Description: MOSFET N-CH 600V 9.7A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 500µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V.
Weitere Produktangebote TK10E60W,S1VX nach Preis ab 4.02 EUR bis 7.76 EUR
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TK10E60W,S1VX | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 9.7A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
auf Bestellung 66 Stücke: Lieferzeit 10-14 Tag (e) |
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TK10E60W,S1VX | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |