TK10E80W,S1X Toshiba
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.71 EUR |
| 50+ | 3.94 EUR |
| 100+ | 3.5 EUR |
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Technische Details TK10E80W,S1X Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 450µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V.
Weitere Produktangebote TK10E80W,S1X nach Preis ab 4.47 EUR bis 5.63 EUR
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| TK10E80W,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR TO-Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TK10E80W,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 800V 9.5A 3-Pin(3+Tab) TO-220 Tube |
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