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TK10P50W,RQ

TK10P50W,RQ Toshiba

TK10P50W_datasheet_en_20151208-1649933.pdf Hersteller: Toshiba
MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK PD=80W F=1MHZ
auf Bestellung 651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.78 EUR
10+ 2.31 EUR
100+ 1.85 EUR
250+ 1.7 EUR
500+ 1.54 EUR
1000+ 1.32 EUR
2000+ 1.25 EUR
Mindestbestellmenge: 2
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Technische Details TK10P50W,RQ Toshiba

Description: PB-F POWER MOSFET TRANSISTOR DPA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 500µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V.

Weitere Produktangebote TK10P50W,RQ nach Preis ab 1.29 EUR bis 2.71 EUR

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TK10P50W,RQ Hersteller : Toshiba Semiconductor and Storage TK10P50W_datasheet_en_20151208.pdf?did=53221&prodName=TK10P50W Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 1613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.71 EUR
10+ 2.25 EUR
100+ 1.79 EUR
500+ 1.52 EUR
1000+ 1.29 EUR
Mindestbestellmenge: 7
TK10P50W,RQ TK10P50W,RQ Hersteller : Toshiba 166docget.jspdid53221prodnametk10p50w.jspdid53221prodnametk10p50w.pd.pdf Trans MOSFET N-CH Si 500V 9.7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TK10P50W,RQ Hersteller : Toshiba Semiconductor and Storage TK10P50W_datasheet_en_20151208.pdf?did=53221&prodName=TK10P50W Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar