| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.24 EUR |
| 10+ | 3.42 EUR |
| 100+ | 2.89 EUR |
| 2000+ | 2.87 EUR |
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Technische Details TK10P60W,RVQ Toshiba
Description: MOSFET N CH 600V 9.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 500µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V.
Weitere Produktangebote TK10P60W,RVQ nach Preis ab 3.38 EUR bis 7.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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TK10P60W,RVQ | Toshiba Semiconductor and Storage |
 Description: MOSFET N CH 600V 9.7A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
auf Bestellung 2264 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK10P60W,RVQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 2264 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.9 EUR |
| 10+ | 5.21 EUR |
| 100+ | 3.68 EUR |
| 500+ | 3.38 EUR |