auf Bestellung 2481 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 79+ | 1.87 EUR |
| 100+ | 1.6 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.35 EUR |
| 2000+ | 1.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK10P60W,RVQ Toshiba
Description: MOSFET N CH 600V 9.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 500µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V.
Weitere Produktangebote TK10P60W,RVQ nach Preis ab 1.87 EUR bis 6.04 EUR
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TK10P60W,RVQ | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 600V 9.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2481 Stücke: Lieferzeit 14-21 Tag (e) |
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TK10P60W,RVQ | Hersteller : Toshiba |
MOSFETs N-Ch 9.7A 80W FET 600V 700pF 20nC |
auf Bestellung 470 Stücke: Lieferzeit 10-14 Tag (e) |
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TK10P60W,RVQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 9.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
auf Bestellung 2496 Stücke: Lieferzeit 10-14 Tag (e) |
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TK10P60W,RVQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TK10P60W,RVQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TK10P60W,RVQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 9.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
Produkt ist nicht verfügbar |