auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.55 EUR |
| 10+ | 3.68 EUR |
| 75+ | 2.59 EUR |
| 525+ | 2.41 EUR |
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Technische Details TK10Q60W,S1VQ Toshiba
Description: MOSFET N-CH 600V 9.7A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 500µA, Supplier Device Package: IPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V.
Weitere Produktangebote TK10Q60W,S1VQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TK10Q60W,S1VQ | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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TK10Q60W,S1VQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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TK10Q60W,S1VQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 9.7A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
Produkt ist nicht verfügbar |