| Anzahl | Preis |
|---|---|
| 1+ | 6.55 EUR |
| 10+ | 3.68 EUR |
| 75+ | 2.59 EUR |
| 525+ | 2.41 EUR |
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Technische Details TK10Q60W,S1VQ Toshiba
Description: MOSFET N-CH 600V 9.7A IPAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube, Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 3.7V @ 500µA, Power Dissipation (Max): 80W (Tc).
Weitere Produktangebote TK10Q60W,S1VQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK10Q60W,S1VQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 9.7A IPAKFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 3.7V @ 500µA Power Dissipation (Max): 80W (Tc) |
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