TK10S04K3L(T6L1,NQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 10A DPAK, Qualification: AEC-Q101, Grade: Automotive, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.