TK110E10PL,S1X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 208 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 3.09 EUR |
50+ | 2.49 EUR |
100+ | 1.98 EUR |
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Technische Details TK110E10PL,S1X Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V.
Weitere Produktangebote TK110E10PL,S1X nach Preis ab 1.23 EUR bis 3.12 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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TK110E10PL,S1X | Hersteller : Toshiba | MOSFET TO-220 PD=87W 1MHz PWR MOSFET TRNS |
auf Bestellung 1435 Stücke: Lieferzeit 14-28 Tag (e) |
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TK110E10PL,S1X | Hersteller : Toshiba | Trans MOSFET N-CH Si 100V 42A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |