TK110E65Z,S1X Toshiba Semiconductor and Storage

Description: 650V DTMOS VI TO-220 110MOHM, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 1.02mA, Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Power Dissipation (Max): 190W (Tc).