TK110U65Z,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 3.76 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2000 Stücke
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Produktbewertung abgeben
Technische Details TK110U65Z,RQ Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.02mA, Supplier Device Package: TOLL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V.
Weitere Produktangebote TK110U65Z,RQ nach Preis ab 2.82 EUR bis 10.69 EUR
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TK110U65Z,RQ | Toshiba |
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=190W F=1MHZ |
auf Bestellung 3792 Stücke: Lieferzeit 10-14 Tag (e) |
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TK110U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=190W F=1MHZ Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
auf Bestellung 5927 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK110U65Z,RQ | Toshiba |
Trans MOSFET N-CH Si 650V 24A 9-Pin(8+Tab) TOLL T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TK110U65Z,RQ |
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Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=190W F=1MHZ
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=190W F=1MHZ
auf Bestellung 3792 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.5 EUR |
| 10+ | 5.3 EUR |
| 100+ | 4.46 EUR |
| 500+ | 4.21 EUR |
| TK110U65Z,RQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 5927 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.69 EUR |
| 10+ | 7.12 EUR |
| 50+ | 5.59 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.61 EUR |
| TK110U65Z,RQ |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 24A 9-Pin(8+Tab) TOLL T/R
Trans MOSFET N-CH Si 650V 24A 9-Pin(8+Tab) TOLL T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.57 EUR |
| 33+ | 5.24 EUR |
| 34+ | 5 EUR |
| 50+ | 4.76 EUR |
| 100+ | 4 EUR |
| 250+ | 3.56 EUR |
| 500+ | 3.25 EUR |
| 1000+ | 2.82 EUR |