TK110U65Z,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 3.82 EUR |
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Technische Details TK110U65Z,RQ Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 4V @ 1.02mA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK110U65Z,RQ nach Preis ab 3.98 EUR bis 8.25 EUR
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TK110U65Z,RQ | Hersteller : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=190W F=1MHZ |
auf Bestellung 3792 Stücke: Lieferzeit 10-14 Tag (e) |
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TK110U65Z,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=190W F=1MHZ Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 4V @ 1.02mA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 5932 Stücke: Lieferzeit 10-14 Tag (e) |
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