TK110U65Z,RQ

TK110U65Z,RQ Toshiba Semiconductor and Storage


docget.jsp?did=69972&prodName=TK110U65Z Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.92 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK110U65Z,RQ Toshiba Semiconductor and Storage

Description: DTMOS VI TOLL PD=190W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.02mA, Supplier Device Package: TOLL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V.

Weitere Produktangebote TK110U65Z,RQ nach Preis ab 3.56 EUR bis 8.29 EUR

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TK110U65Z,RQ TK110U65Z,RQ Hersteller : Toshiba TK110U65Z_datasheet_en_20210914-2005158.pdf MOSFETs POWER MOSFET TRANSISTOR TOLL PD=190W F=1MHZ
auf Bestellung 3798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.51 EUR
10+4.19 EUR
100+3.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK110U65Z,RQ TK110U65Z,RQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=69972&prodName=TK110U65Z Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 5932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.29 EUR
10+4.80 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK110U65Z,RQ Hersteller : Toshiba tk110u65z_datasheet_en_20210914.pdf Trans MOSFET N-CH Si 650V 24A 9-Pin(8+Tab) TOLL T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH