TK110U65Z,RQ Toshiba Semiconductor and Storage


docget.jsp?did=69972&prodName=TK110U65Z
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+3.76 EUR
Mindestbestellmenge: 2000 Stücke
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Technische Details TK110U65Z,RQ Toshiba Semiconductor and Storage

Description: DTMOS VI TOLL PD=190W F=1MHZ, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 4V @ 1.02mA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote TK110U65Z,RQ nach Preis ab 2.73 EUR bis 10.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TK110U65Z,RQ TK110U65Z,RQ Toshiba 7AC5BEE70BA00D9E3E72450E8E24C922B58C213B30A12E4AF16044B6DBD586A3.pdf MOSFETs POWER MOSFET TRANSISTOR TOLL PD=190W F=1MHZ
auf Bestellung 3792 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.5 EUR
10+5.3 EUR
100+4.46 EUR
500+4.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK110U65Z,RQ TK110U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69972&prodName=TK110U65Z Description: DTMOS VI TOLL PD=190W F=1MHZ
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 5927 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.69 EUR
10+7.12 EUR
50+5.59 EUR
100+5.09 EUR
500+4.61 EUR
Mindestbestellmenge: 2 Stücke
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TK110U65Z,RQ Toshiba docget.jsp?did=69972&prodName=TK110U65Z Trans MOSFET N-CH Si 650V 24A 9-Pin(8+Tab) TOLL T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
28+6.35 EUR
33+5.06 EUR
34+4.83 EUR
50+4.59 EUR
100+3.87 EUR
250+3.44 EUR
500+3.14 EUR
1000+2.73 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK110U65Z,RQ 7AC5BEE70BA00D9E3E72450E8E24C922B58C213B30A12E4AF16044B6DBD586A3.pdf
Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=190W F=1MHZ
auf Bestellung 3792 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+10.5 EUR
10+5.3 EUR
100+4.46 EUR
500+4.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK110U65Z,RQ docget.jsp?did=69972&prodName=TK110U65Z
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 5927 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.69 EUR
10+7.12 EUR
50+5.59 EUR
100+5.09 EUR
500+4.61 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK110U65Z,RQ docget.jsp?did=69972&prodName=TK110U65Z
Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 24A 9-Pin(8+Tab) TOLL T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+6.35 EUR
33+5.06 EUR
34+4.83 EUR
50+4.59 EUR
100+3.87 EUR
250+3.44 EUR
500+3.14 EUR
1000+2.73 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH