TK115A65Z5,S4X Toshiba
| Anzahl | Preis |
|---|---|
| 1+ | 8.92 EUR |
| 10+ | 4.79 EUR |
| 100+ | 4.28 EUR |
| 500+ | 4.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK115A65Z5,S4X Toshiba
Description: N-CH MOSFET, 650 V, 0.115 @10V,, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4.5V @ 1.02mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole.
Weitere Produktangebote TK115A65Z5,S4X nach Preis ab 4.79 EUR bis 9.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK115A65Z5,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: N-CH MOSFET, 650 V, 0.115 @10V,Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4.5V @ 1.02mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
|