TK115N65Z5,S1F Toshiba
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.77 EUR |
| 10+ | 8.18 EUR |
| 120+ | 5.17 EUR |
| 510+ | 4.73 EUR |
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Technische Details TK115N65Z5,S1F Toshiba
Description: N-CH MOSFET, 650 V, 0.115 @10V,, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.02mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V.
Weitere Produktangebote TK115N65Z5,S1F
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TK115N65Z5,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: N-CH MOSFET, 650 V, 0.115 @10V,Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.02mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V |
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