| Anzahl | Preis |
|---|---|
| 1+ | 3.04 EUR |
| 10+ | 1.47 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK11A65W,S5X Toshiba
Description: MOSFET N-CH 650V 11.1A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.5V @ 450µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK11A65W,S5X nach Preis ab 1.62 EUR bis 3.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK11A65W,S5X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 11.1A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 450µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
|