auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.04 EUR |
| 10+ | 1.44 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.89 EUR |
| 5000+ | 0.87 EUR |
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Technische Details TK11A65W,S5X Toshiba
Description: MOSFET N-CH 650V 11.1A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 5.5A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 450µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V.
Weitere Produktangebote TK11A65W,S5X nach Preis ab 1.62 EUR bis 3.12 EUR
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TK11A65W,S5X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 11.1A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 5.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 450µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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TK11A65W,S5X | Hersteller : Toshiba |
Trans MOSFET N-CH 650V 11.1A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |
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TK11A65W,S5X | Hersteller : Toshiba |
Trans MOSFET N-CH 650V 11.1A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |