TK11P65W,RQ(S TOSHIBA
Hersteller: TOSHIBACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DPAK
Drain-source voltage: 650V
Drain current: 11.1A
On-state resistance: 440mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
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Technische Details TK11P65W,RQ(S TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK, Mounting: SMD, Kind of package: reel; tape, Gate charge: 25nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Case: DPAK, Drain-source voltage: 650V, Drain current: 11.1A, On-state resistance: 440mΩ, Type of transistor: N-MOSFET, Power dissipation: 100W, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
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TK11P65W,RQ(S | Hersteller : Toshiba |
Trans MOSFET N-CH Si 650V 11.1A 3-Pin(2+Tab) DPAK |
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TK11P65W,RQ(S | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK Mounting: SMD Kind of package: reel; tape Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±30V Case: DPAK Drain-source voltage: 650V Drain current: 11.1A On-state resistance: 440mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar |
Produkt ist nicht verfügbar |