auf Bestellung 1709 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
141+ | 1.11 EUR |
143+ | 1.06 EUR |
144+ | 1.01 EUR |
500+ | 0.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK11P65W,RQ Toshiba
Description: MOSFET N-CH 650V 11.1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 450µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V.
Weitere Produktangebote TK11P65W,RQ nach Preis ab 0.97 EUR bis 4.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TK11P65W,RQ | Hersteller : Toshiba | Trans MOSFET N-CH Si 650V 11.1A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1709 Stücke: Lieferzeit 14-21 Tag (e) |
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TK11P65W,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 11.1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 450µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
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TK11P65W,RQ | Hersteller : Toshiba | MOSFET Power MOSFET N-Channel |
auf Bestellung 267 Stücke: Lieferzeit 14-28 Tag (e) |
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TK11P65W,RQ | Hersteller : Toshiba | Trans MOSFET N-CH Si 650V 11.1A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TK11P65W,RQ | Hersteller : Toshiba | Trans MOSFET N-CH Si 650V 11.1A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TK11P65W,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 11.1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 450µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
Produkt ist nicht verfügbar |