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TK12J60W,S1VE(S Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tray
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Technische Details TK12J60W,S1VE(S Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P(N), Vgs(th) (Max) @ Id: 3.7V @ 600µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tray.