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TK12P60W,RVQ

TK12P60W,RVQ Toshiba Semiconductor and Storage

TK12P60W_datasheet_en_20140917.pdf?did=13511&prodName=TK12P60W
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.82 EUR
100+2.04 EUR
500+1.96 EUR
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Technische Details TK12P60W,RVQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 600V 11.5A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.7V @ 600µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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TK12P60W,RVQ TK12P60W,RVQ Hersteller : Toshiba 7A93ABDE0C7FC7329D55801D59191366FC977196AB370D06204E4C7B39AB6BB5.pdf MOSFETs DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.53 EUR
10+3.61 EUR
100+2.64 EUR
500+2.15 EUR
1000+2.13 EUR
2000+2.01 EUR
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TK12P60W,RVQ TK12P60W,RVQ Hersteller : Toshiba Semiconductor and Storage TK12P60W_datasheet_en_20140917.pdf?did=13511&prodName=TK12P60W Description: MOSFET N CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH