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TK12P60W,RVQ

TK12P60W,RVQ Toshiba Semiconductor and Storage

TK12P60W_datasheet_en_20140917.pdf?did=13511&prodName=TK12P60W Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 1950 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.23 EUR
10+ 4.35 EUR
100+ 3.46 EUR
500+ 2.93 EUR
1000+ 2.49 EUR
Mindestbestellmenge: 5
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Technische Details TK12P60W,RVQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 600V 11.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 600µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V.

Weitere Produktangebote TK12P60W,RVQ nach Preis ab 2.4 EUR bis 5.33 EUR

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TK12P60W,RVQ TK12P60W,RVQ Hersteller : Toshiba TK12P60W_datasheet_en_20140917-1140055.pdf MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC
auf Bestellung 1957 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.33 EUR
12+ 4.42 EUR
100+ 3.51 EUR
250+ 3.25 EUR
500+ 2.94 EUR
1000+ 2.51 EUR
2000+ 2.4 EUR
Mindestbestellmenge: 10
TK12P60W,RVQ TK12P60W,RVQ Hersteller : Toshiba Semiconductor and Storage TK12P60W_datasheet_en_20140917.pdf?did=13511&prodName=TK12P60W Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
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