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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.09 EUR |
| 10+ | 3.71 EUR |
| 50+ | 3.63 EUR |
| 100+ | 3.1 EUR |
| 250+ | 3.08 EUR |
| 500+ | 3.06 EUR |
| 1000+ | 3.03 EUR |
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Technische Details TK14A65W5,S5X Toshiba
Description: MOSFET N-CH 650V 13.7A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 690µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V.
Weitere Produktangebote TK14A65W5,S5X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TK14A65W5,S5X | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |
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TK14A65W5,S5X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 13.7A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 690µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V |
Produkt ist nicht verfügbar |