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TK14G65W,RQ

TK14G65W,RQ Toshiba Semiconductor and Storage

TK14G65W_datasheet_en_20140225.pdf?did=14506&prodName=TK14G65W Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.79 EUR
2000+ 1.7 EUR
Mindestbestellmenge: 1000
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Technische Details TK14G65W,RQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 13.7A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 690µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V.

Weitere Produktangebote TK14G65W,RQ nach Preis ab 2.11 EUR bis 5.69 EUR

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TK14G65W,RQ TK14G65W,RQ Hersteller : Toshiba Semiconductor and Storage TK14G65W_datasheet_en_20140225.pdf?did=14506&prodName=TK14G65W Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 2788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.77 EUR
10+ 3.13 EUR
100+ 2.49 EUR
500+ 2.11 EUR
Mindestbestellmenge: 5
TK14G65W,RQ TK14G65W,RQ Hersteller : Toshiba TK14G65W_datasheet_en_20140225-1916194.pdf MOSFET Power MOSFET N-Channel
auf Bestellung 896 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.69 EUR
12+ 4.71 EUR
100+ 3.74 EUR
250+ 3.46 EUR
500+ 3.15 EUR
1000+ 2.68 EUR
2000+ 2.56 EUR
Mindestbestellmenge: 10
TK14G65W,RQ Hersteller : Toshiba TK14G65W_datasheet_en_20140225.pdf?did=14506&prodName=TK14G65W MOSFET N-CH 650V 13.7A DPAK
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
TK14G65W,RQ TK14G65W,RQ Hersteller : Toshiba 1247docget.jsplangenpidtk14g65wtypedatasheet.jsplangenpidtk14g65wtype.pdf Trans MOSFET N-CH Si 650V 13.7A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
TK14G65W,RQ Hersteller : Toshiba 1247docget.jsplangenpidtk14g65wtypedatasheet.jsplangenpidtk14g65wtype.pdf Trans MOSFET N-CH Si 650V 13.7A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar