| Anzahl | Preis |
|---|---|
| 1+ | 7.13 EUR |
| 10+ | 3.7 EUR |
| 100+ | 3.34 EUR |
| 500+ | 3.04 EUR |
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Technische Details TK155A65Z,S4X Toshiba
Description: MOSFET N-CH 650V 18A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 730µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK155A65Z,S4X nach Preis ab 7.16 EUR bis 7.16 EUR
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TK155A65Z,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 18A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4V @ 730µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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