TK155E60Z1,S1X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: N-CH MOSFET 600 V 0.155 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.72 EUR |
| 10+ | 4.32 EUR |
| 50+ | 3.76 EUR |
| 100+ | 3.58 EUR |
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Technische Details TK155E60Z1,S1X Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.155 OHM TO-2, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 610µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK155E60Z1,S1X | Hersteller : Toshiba |
MOSFETs 600 V 0.155 Ohm N-ch MOSFET TO-220 DTMOS |
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