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TK160F10N1L,LQ

TK160F10N1L,LQ Toshiba Semiconductor and Storage

TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.38 EUR
10+3.53 EUR
100+2.57 EUR
500+2.22 EUR
Mindestbestellmenge: 5
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Technische Details TK160F10N1L,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 160A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-220SM(W), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V, Qualification: AEC-Q101.

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TK160F10N1L,LQ TK160F10N1L,LQ Hersteller : Toshiba TK160F10N1L_datasheet_en_20200624-1114616.pdf MOSFETs U-MOSVIII-H 100V 160A 122nC MOSFET
auf Bestellung 19538 Stücke:
Lieferzeit 10-14 Tag (e)
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1+4.44 EUR
10+3.56 EUR
25+3.52 EUR
50+3.47 EUR
100+2.59 EUR
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TK160F10N1L,LQ TK160F10N1L,LQ Hersteller : Toshiba tk160f10n1l_datasheet_en_20200624.pdf Trans MOSFET N-CH Si 100V 160A 3-Pin(2+Tab) TO-220SM(W) T/R Automotive AEC-Q101
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TK160F10N1L,LQ TK160F10N1L,LQ Hersteller : Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH