Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TK160F10N1L,LXGQ
TK160F10N1L,LXGQ

TK160F10N1L,LXGQ Toshiba Semiconductor and Storage

TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 375W (Tc)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.7 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TK160F10N1L,LXGQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 160A TO220SM, Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-220SM(W), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 375W (Tc).

Weitere Produktangebote TK160F10N1L,LXGQ nach Preis ab 2.84 EUR bis 7.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TK160F10N1L,LXGQ TK160F10N1L,LXGQ Hersteller : Toshiba Semiconductor and Storage TK160F10N1L_datasheet_en_20200624.pdf?did=35808&prodName=TK160F10N1L Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.07 EUR
10+4.36 EUR
100+3.21 EUR
500+2.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK160F10N1L,LXGQ TK160F10N1L,LXGQ Hersteller : Toshiba 886C66D6E649A8A74C4AC24AC412426E0B39405F18A6552E123A5F9A7FC50361.pdf MOSFETs PD=375W F=1MHZ AEC-Q101
auf Bestellung 26372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.53 EUR
10+5 EUR
100+3.54 EUR
500+3.08 EUR
1000+2.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH