| Anzahl | Preis |
|---|---|
| 1+ | 5.23 EUR |
| 10+ | 5.17 EUR |
| 25+ | 5.16 EUR |
| 50+ | 2.73 EUR |
| 100+ | 2.5 EUR |
| 250+ | 2.48 EUR |
| 500+ | 2.15 EUR |
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Technische Details TK16E60W,S1VX Toshiba
Description: MOSFET N-CH 600V 15.8A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 3.7V @ 790µA, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote TK16E60W,S1VX nach Preis ab 3.67 EUR bis 5.61 EUR
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TK16E60W,S1VX | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 15.8A TO220Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 3.7V @ 790µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK16E60W,S1VX | Hersteller : Toshiba |
N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-220 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |