| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.22 EUR |
| 10+ | 6.15 EUR |
| 25+ | 6.14 EUR |
| 50+ | 3.25 EUR |
| 100+ | 2.98 EUR |
| 250+ | 2.95 EUR |
| 500+ | 2.56 EUR |
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Technische Details TK16E60W,S1VX Toshiba
Description: MOSFET N-CH 600V 15.8A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 3.7V @ 790µA, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote TK16E60W,S1VX nach Preis ab 4.37 EUR bis 6.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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TK16E60W,S1VX | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 15.8A TO220Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 3.7V @ 790µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TK16E60W,S1VX |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 600V 15.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.68 EUR |
| 10+ | 4.37 EUR |