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TK16G60W,RVQ

TK16G60W,RVQ Toshiba Semiconductor and Storage

docget.jsp?did=13520&prodName=TK16G60W
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 790µA
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.91 EUR
10+10.14 EUR
100+7.44 EUR
500+6.58 EUR
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Technische Details TK16G60W,RVQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 600V 15.8A D2PAK, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 3.7V @ 790µA, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).

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TK16G60W,RVQ TK16G60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13520&prodName=TK16G60W Description: MOSFET N CH 600V 15.8A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK16G60W,RVQ TK16G60W,RVQ Toshiba TK16G60W_datasheet_en_20131225-1140067.pdf MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK16G60W,RVQ docget.jsp?did=13520&prodName=TK16G60W
TK16G60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK16G60W,RVQ TK16G60W_datasheet_en_20131225-1140067.pdf
TK16G60W,RVQ
Hersteller: Toshiba
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH