TK16G60W,RVQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.91 EUR |
| 10+ | 10.14 EUR |
| 100+ | 7.44 EUR |
| 500+ | 6.58 EUR |
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Mindestmenge:
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Technische Details TK16G60W,RVQ Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 790µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V.
Weitere Produktangebote TK16G60W,RVQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TK16G60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 15.8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 790µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
TK16G60W,RVQ | Toshiba |
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TK16G60W,RVQ | Toshiba |
Trans MOSFET N-CH Si 600V 15.8A D2PAK T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK16G60W,RVQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TK16G60W,RVQ |
|
Hersteller: Toshiba
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TK16G60W,RVQ |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 600V 15.8A D2PAK T/R
Trans MOSFET N-CH Si 600V 15.8A D2PAK T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH