auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.27 EUR |
| 10+ | 7.46 EUR |
| 25+ | 7.41 EUR |
| 100+ | 5.56 EUR |
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Technische Details TK16J60W5,S1VQ Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 790µA, Supplier Device Package: TO-3P(N), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V.
Weitere Produktangebote TK16J60W5,S1VQ nach Preis ab 8.22 EUR bis 9.15 EUR
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TK16J60W5,S1VQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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