| Anzahl | Preis |
|---|---|
| 1+ | 8.27 EUR |
| 10+ | 7.46 EUR |
| 25+ | 7.41 EUR |
| 100+ | 5.56 EUR |
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Technische Details TK16J60W5,S1VQ Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P(N), Vgs(th) (Max) @ Id: 4.5V @ 790µA, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V.
Weitere Produktangebote TK16J60W5,S1VQ nach Preis ab 8.22 EUR bis 9.15 EUR
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TK16J60W5,S1VQ | Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORVgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P(N) Vgs(th) (Max) @ Id: 4.5V @ 790µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 600 V |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK16J60W5,S1VQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.15 EUR |
| 10+ | 8.22 EUR |