TK170V65Z,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
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Technische Details TK170V65Z,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 730µA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V.
Weitere Produktangebote TK170V65Z,LQ nach Preis ab 3.83 EUR bis 9.82 EUR
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TK170V65Z,LQ | Toshiba |
MOSFETs MOSFET 650V 170mOhms DTMOS-VI |
auf Bestellung 4720 Stücke: Lieferzeit 10-14 Tag (e) |
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TK170V65Z,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 18A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V |
auf Bestellung 4938 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK170V65Z,LQ |
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Hersteller: Toshiba
MOSFETs MOSFET 650V 170mOhms DTMOS-VI
MOSFETs MOSFET 650V 170mOhms DTMOS-VI
auf Bestellung 4720 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.07 EUR |
| 10+ | 6.53 EUR |
| 100+ | 4.69 EUR |
| 500+ | 4.55 EUR |
| 1000+ | 4.24 EUR |
| 2500+ | 3.83 EUR |
| TK170V65Z,LQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 4938 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.82 EUR |
| 10+ | 6.54 EUR |
| 100+ | 4.69 EUR |
| 500+ | 4.53 EUR |