| Anzahl | Preis |
|---|---|
| 1+ | 8.45 EUR |
| 10+ | 8.31 EUR |
| 25+ | 8.29 EUR |
| 50+ | 4.58 EUR |
| 100+ | 4.22 EUR |
| 500+ | 3.59 EUR |
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Technische Details TK17E80W,S1X Toshiba
Description: MOSFET N-CHANNEL 800V 17A TO220, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 850µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote TK17E80W,S1X nach Preis ab 5.39 EUR bis 10.14 EUR
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TK17E80W,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CHANNEL 800V 17A TO220Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 850µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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