auf Bestellung 54 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 9.15 EUR |
| 30+ | 8.22 EUR |
| 120+ | 5.85 EUR |
| 270+ | 5.8 EUR |
| 510+ | 5.33 EUR |
| 1020+ | 4.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK17N65W,S1F Toshiba
Description: MOSFET N-CH 650V 17.3A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 900µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V.
Weitere Produktangebote TK17N65W,S1F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
TK17N65W,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 17.3A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
Produkt ist nicht verfügbar |