TK17V65W,LQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
| Anzahl | Preis |
|---|---|
| 3+ | 8.4 EUR |
| 10+ | 5.58 EUR |
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Technische Details TK17V65W,LQ Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 4-DFN-EP (8x8), Vgs(th) (Max) @ Id: 3.5V @ 900µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK17V65W,LQ
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TK17V65W,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-DFN-EP (8x8) Vgs(th) (Max) @ Id: 3.5V @ 900µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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TK17V65W,LQ | Hersteller : Toshiba |
MOSFETs DFN8x8-OS PD=156W 1MHz PWR MOSFET TRNS |
Produkt ist nicht verfügbar |