TK18A30D,S5X Toshiba
| Anzahl | Preis |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.72 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.14 EUR |
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Technische Details TK18A30D,S5X Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 139mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V.
Weitere Produktangebote TK18A30D,S5X nach Preis ab 2.51 EUR bis 3.91 EUR
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| TK18A30D,S5X | Hersteller : Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR TO-Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 139mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
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