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TK18A50D(STA4,Q,M)

TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.54 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 500V 18A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.

Weitere Produktangebote TK18A50D(STA4,Q,M) nach Preis ab 0.99 EUR bis 8.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TK18A50D(STA4,Q,M) TK18A50D(STA4,Q,M) Toshiba 18043B92C7949BDDC3F60F3232818CC1F385E42303DEDC6A254AAB7598BD2E91.pdf MOSFETs N-Ch MOS 18A 500V 50W 2600pF 0.27
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.65 EUR
10+4.44 EUR
100+3.94 EUR
500+3.31 EUR
1000+3.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK18A50D(STA4,Q,M) TOSHIBA TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 18A; 50W; TO220-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
Technology: MOSFET
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)
700+0.99 EUR
Mindestbestellmenge: 700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK18A50D(STA4,Q,M) 18043B92C7949BDDC3F60F3232818CC1F385E42303DEDC6A254AAB7598BD2E91.pdf
TK18A50D(STA4,Q,M)
Hersteller: Toshiba
MOSFETs N-Ch MOS 18A 500V 50W 2600pF 0.27
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+8.65 EUR
10+4.44 EUR
100+3.94 EUR
500+3.31 EUR
1000+3.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK18A50D(STA4,Q,M) TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 18A; 50W; TO220-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
Technology: MOSFET
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
700+0.99 EUR
Mindestbestellmenge: 700 Stücke
Im Einkaufswagen  Stück im Wert von  UAH