auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.05 EUR |
| 10+ | 4.68 EUR |
| 50+ | 3.96 EUR |
| 100+ | 3.47 EUR |
| 500+ | 3.15 EUR |
| 1000+ | 2.78 EUR |
| 2500+ | 2.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK190A65Z,S4X Toshiba
Description: MOSFET N-CH 650V 15A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 610µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V.
Weitere Produktangebote TK190A65Z,S4X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
TK190A65Z,S4X | Hersteller : Toshiba |
 Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |
|
 |
TK190A65Z,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |
|
 |
TK190A65Z,S4X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 15A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V |
Produkt ist nicht verfügbar |