auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.38 EUR |
| 10+ | 3.68 EUR |
| 50+ | 3.1 EUR |
| 100+ | 2.83 EUR |
| 250+ | 2.78 EUR |
| 500+ | 2.73 EUR |
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Technische Details TK190E65Z,S1X Toshiba
Description: 650V DTMOS VI TO-220 190MOHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 610µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V.
Weitere Produktangebote TK190E65Z,S1X nach Preis ab 3.6 EUR bis 4.89 EUR
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TK190E65Z,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: 650V DTMOS VI TO-220 190MOHMPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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