auf Bestellung 1469 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 54+ | 2.74 EUR |
| 57+ | 2.50 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.91 EUR |
| 1000+ | 1.64 EUR |
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Technische Details TK190U65Z,RQ Toshiba
Description: DTMOS VI TOLL PD=130W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 610µA, Supplier Device Package: TOLL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V.
Weitere Produktangebote TK190U65Z,RQ nach Preis ab 1.64 EUR bis 7.52 EUR
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TK190U65Z,RQ | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 650V 15A 9-Pin(8+Tab) TOLL T/R |
auf Bestellung 1469 Stücke: Lieferzeit 14-21 Tag (e) |
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TK190U65Z,RQ | Hersteller : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=130W F=1MHZ |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK190U65Z,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=130W F=1MHZ Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V |
auf Bestellung 1022 Stücke: Lieferzeit 10-14 Tag (e) |
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TK190U65Z,RQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 650V 15A 9-Pin(8+Tab) TOLL T/R |
Produkt ist nicht verfügbar |
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TK190U65Z,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=130W F=1MHZ Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V |
Produkt ist nicht verfügbar |