| Anzahl | Preis |
|---|---|
| 1+ | 6 EUR |
| 10+ | 3.63 EUR |
| 100+ | 3.31 EUR |
| 500+ | 2.85 EUR |
| 1000+ | 2.59 EUR |
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Technische Details TK19A45D(STA4,Q,M) Toshiba
Description: MOSFET N-CH 450V 19A TO220SIS, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V.
Weitere Produktangebote TK19A45D(STA4,Q,M) nach Preis ab 6.04 EUR bis 6.04 EUR
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TK19A45D(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 450V 19A TO220SISCurrent - Continuous Drain (Id) @ 25°C: 19A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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