TK19A50W,S5X Toshiba
auf Bestellung 157 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 6.45 EUR |
| 10+ | 5.36 EUR |
| 100+ | 4.26 EUR |
| 250+ | 3.82 EUR |
| 500+ | 3.48 EUR |
| 1000+ | 3.07 EUR |
| 2500+ | 2.94 EUR |
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Technische Details TK19A50W,S5X Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 790µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V.
Weitere Produktangebote TK19A50W,S5X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TK19A50W,S5X | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 500V 18.5A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |
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| TK19A50W,S5X | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TO- Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 790µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
Produkt ist nicht verfügbar |