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TK1R4F04PB,LXGQ

TK1R4F04PB,LXGQ Toshiba Semiconductor and Storage

TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.07 EUR
Mindestbestellmenge: 1000
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Technische Details TK1R4F04PB,LXGQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 160A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V.

Weitere Produktangebote TK1R4F04PB,LXGQ nach Preis ab 2.44 EUR bis 6.32 EUR

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TK1R4F04PB,LXGQ TK1R4F04PB,LXGQ Hersteller : Toshiba Semiconductor and Storage TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.36 EUR
10+ 3.63 EUR
100+ 2.89 EUR
500+ 2.44 EUR
Mindestbestellmenge: 5
TK1R4F04PB,LXGQ TK1R4F04PB,LXGQ Hersteller : Toshiba TK1R4F04PB_datasheet_en_20200624-1840173.pdf MOSFET 205W 1MHz Automotive; AEC-Q101
auf Bestellung 1961 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+6.32 EUR
10+ 5.25 EUR
100+ 4.19 EUR
250+ 3.85 EUR
500+ 3.51 EUR
1000+ 2.99 EUR
2000+ 2.86 EUR
Mindestbestellmenge: 9