TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.57 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2000 Stücke
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Produktbewertung abgeben
Technische Details TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: DPAK+, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V.
Weitere Produktangebote TK1R4S04PB,LXHQ nach Preis ab 1.62 EUR bis 5.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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TK1R4S04PB,LXHQ | Toshiba |
MOSFETs 180W 1MHz Automotive; AEC-Q101 |
auf Bestellung 25771 Stücke: Lieferzeit 10-14 Tag (e) |
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TK1R4S04PB,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 120A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
auf Bestellung 4738 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TK1R4S04PB,LXHQ |
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Hersteller: Toshiba
MOSFETs 180W 1MHz Automotive; AEC-Q101
MOSFETs 180W 1MHz Automotive; AEC-Q101
auf Bestellung 25771 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.18 EUR |
| 10+ | 2.56 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.74 EUR |
| 2000+ | 1.62 EUR |
| TK1R4S04PB,LXHQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 4738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.19 EUR |
| 10+ | 3.36 EUR |
| 100+ | 2.3 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.71 EUR |