Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TK1R4S04PB,LXHQ
TK1R4S04PB,LXHQ

TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage

TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.41 EUR
Mindestbestellmenge: 2000
Produktrezensionen
Produktbewertung abgeben

Technische Details TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 120A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: DPAK+, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V.

Weitere Produktangebote TK1R4S04PB,LXHQ nach Preis ab 1.48 EUR bis 4.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TK1R4S04PB,LXHQ TK1R4S04PB,LXHQ Hersteller : Toshiba Semiconductor and Storage TK1R4S04PB_datasheet_en_20200624.pdf?did=30650&prodName=TK1R4S04PB Description: MOSFET N-CH 40V 120A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 3012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.13 EUR
10+ 2.6 EUR
100+ 2.07 EUR
500+ 1.75 EUR
1000+ 1.48 EUR
Mindestbestellmenge: 6
TK1R4S04PB,LXHQ TK1R4S04PB,LXHQ Hersteller : Toshiba TK1R4S04PB_datasheet_en_20200624-1840178.pdf MOSFET 180W 1MHz Automotive; AEC-Q101
auf Bestellung 27192 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.55 EUR
14+ 3.77 EUR
100+ 3.02 EUR
250+ 2.99 EUR
500+ 2.54 EUR
1000+ 2.16 EUR
2000+ 2.05 EUR
Mindestbestellmenge: 12