TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.32 EUR |
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Technische Details TK1R4S04PB,LXHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 3V @ 500µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK1R4S04PB,LXHQ nach Preis ab 1.24 EUR bis 4.36 EUR
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auf Bestellung 26469 Stücke: Lieferzeit 10-14 Tag (e) |
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TK1R4S04PB,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 120A DPAK Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 4738 Stücke: Lieferzeit 10-14 Tag (e) |
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