TK1R5R04PB,LXGQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: D2PAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.28 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details TK1R5R04PB,LXGQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: D2PAK+, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V.
Weitere Produktangebote TK1R5R04PB,LXGQ nach Preis ab 2.26 EUR bis 6.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK1R5R04PB,LXGQ | Toshiba |
MOSFETs 205W 1MHz Automotive; AEC-Q101 |
auf Bestellung 14786 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
TK1R5R04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: D2PAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TK1R5R04PB,LXGQ |
|
Hersteller: Toshiba
MOSFETs 205W 1MHz Automotive; AEC-Q101
MOSFETs 205W 1MHz Automotive; AEC-Q101
auf Bestellung 14786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.56 EUR |
| 10+ | 3.28 EUR |
| 100+ | 3 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.26 EUR |
| TK1R5R04PB,LXGQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: D2PAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: D2PAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.66 EUR |
| 10+ | 4.34 EUR |
| 50+ | 3.34 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.46 EUR |