auf Bestellung 18457 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 6.24 EUR |
| 10+ | 5.2 EUR |
| 100+ | 4.13 EUR |
| 250+ | 3.82 EUR |
| 500+ | 3.46 EUR |
| 1000+ | 2.96 EUR |
| 2000+ | 2.81 EUR |
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Technische Details TK1R5R04PB,LXGQ Toshiba
Description: MOSFET N-CH 40V 160A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: D2PAK+, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V.
Weitere Produktangebote TK1R5R04PB,LXGQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| TK1R5R04PB,LXGQ | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 40V 160A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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TK1R5R04PB,LXGQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: D2PAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
Produkt ist nicht verfügbar |
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TK1R5R04PB,LXGQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: D2PAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
Produkt ist nicht verfügbar |