TK200F04N1L,LXGQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 200A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.