TK200V65Z5,LQ

TK200V65Z5,LQ Toshiba Semiconductor and Storage


TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.98 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TK200V65Z5,LQ Toshiba Semiconductor and Storage

Description: N-CH MOSFET 650 V 0.200 OHM DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 610µA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V.

Weitere Produktangebote TK200V65Z5,LQ nach Preis ab 4.87 EUR bis 10.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TK200V65Z5,LQ TK200V65Z5,LQ Hersteller : Toshiba Semiconductor and Storage TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5 Description: N-CH MOSFET 650 V 0.200 OHM DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.6 EUR
10+7.14 EUR
100+5.17 EUR
500+4.87 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK200V65Z5,LQ TK200V65Z5,LQ Hersteller : Toshiba docget.pdf Trans MOSFET N-CH Si 650V 15A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK200V65Z5,LQ TK200V65Z5,LQ Hersteller : Toshiba TK200V65Z5_datasheet_en_20240603.pdf?did=158605&prodName=TK200V65Z5 MOSFETs 650 V 0.200 Ohm N-ch MOSFET DFN 8 x 8 DTMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH