TK20E60W5,S1VX Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details TK20E60W5,S1VX Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK20E60W5,S1VX | Hersteller : Toshiba |
MOSFETs TO-220 PD=165W 1MHz PWR MOSFET TRNS |
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