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TK20G60W,RVQ

TK20G60W,RVQ Toshiba Semiconductor and Storage

TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 20A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.02 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK20G60W,RVQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 600V 20A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Vgs(th) (Max) @ Id: 3.7V @ 1mA, Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK.

Weitere Produktangebote TK20G60W,RVQ nach Preis ab 2.18 EUR bis 5.86 EUR

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TK20G60W,RVQ TK20G60W,RVQ Hersteller : Toshiba Semiconductor and Storage TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W Description: MOSFET N CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
10+3.83 EUR
100+2.67 EUR
500+2.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK20G60W,RVQ TK20G60W,RVQ Hersteller : Toshiba TK20G60W_datasheet_en_20131226-1916252.pdf MOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A
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Im Einkaufswagen  Stück im Wert von  UAH